2015 International Conference on Solid State Devices and Materials
2015年9月27日〜9月30日Sapporo Convention Center, Sapporo, Japan
2015 International Conference on Solid State Devices and Materials
2015年9月27日〜9月30日Sapporo Convention Center, Sapporo, Japan
[B-5-4]Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors
○Y. Y. Illarionov1,2, M. Waltl1, A. D. Smith3, S. Vaziri3, M. Ostling3, M. Lemme4, T. Grasser1(1.Inst. for Microelectronics (TU Wien), 2.Ioffe Physical-Technical Inst., 3.KTH Royal Inst. of Technology, 4.Univ. of Siegen(Austria))
