2021 International Conference on Solid State Devices and Materials

2021 International Conference on Solid State Devices and Materials

2021年9月6日〜9月9日
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International Conference on Solid State Devices and Materials
2021 International Conference on Solid State Devices and Materials

2021 International Conference on Solid State Devices and Materials

2021年9月6日〜9月9日

[A-1-04]Effect of Gate Stack Material on Performance and Low-frequency Noise in Si p-MOSFETs at Cryogenic Temperature: Comparison of SiO2/Poly-Si Gate and High-k/Metal Gate

〇Hiroshi Oka1、Takumi Inaba1、Ryo Hashimoto1、Takahiro Mori1(1.AIST)
https://doi.org/10.7567/SSDM.2021.A-1-04
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