2021 International Conference on Solid State Devices and Materials

2021 International Conference on Solid State Devices and Materials

2021年9月6日〜9月9日
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International Conference on Solid State Devices and Materials
2021 International Conference on Solid State Devices and Materials

2021 International Conference on Solid State Devices and Materials

2021年9月6日〜9月9日

[A-1-05] Attainment of low subthreshold slope in planar type inversion channel InGaAs NMOSFET with in-situ deposited Al2O3/Y2O3 as gate dielectrics

〇Lawrence Boyu Young1、Jun Liu1、Yen-Hsun Glen Lin1、Hsien-Wen Wan1、Jueinai Kwo2、Minghwei Hong1(1.National Taiwan Univ.、2.National Tsing Hua Univ.)
https://doi.org/10.7567/SSDM.2021.A-1-05
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