[A-4-03]Anisotropic Strain States in Extremely-Thin Body Ge-on-Insulator p-type MOSFET Observed by Oil-Immersion Raman Spectroscopy
〇Ryo Yokogawa1,2、Chia-Tsong Chen3、Kasidit Toprasertpong3、Mitsuru Takenaka3、Shinichi Takagi3、Atsushi Ogura1,2(1.Meiji Univ.、2.MREL、3.Univ. of Tokyo)
