2022 International Conference on Solid State Devices and Materials

2022 International Conference on Solid State Devices and Materials

2022年9月26日〜12月23日幕張メッセ
戻る
International Conference on Solid State Devices and Materials
2022 International Conference on Solid State Devices and Materials

2022 International Conference on Solid State Devices and Materials

2022年9月26日〜12月23日幕張メッセ

[B-3-03]Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge

〇Koki Nozawa1, Takeshi Nishida1, Takashi Suemasu1, Kaoru Toko1(1. Univ. of Tsukuba (Japan))
https://doi.org/10.7567/SSDM.2022.B-3-03
PDFダウンロードPDFダウンロード
Presentation style: Online
Among n-type impurities, P doping in amorphous Ge significantly promoted the lateral growth during solid-phase crystallization, resulting in large grains. The electron mobility was the highest among n-type polycrystalline Ge directly grown on insulators at low temperatures.
戻る