[A-8-01] Dual gating of hBN/bilayer-graphene superlattices: band-engineering and doping a Dirac material | 2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日〜10月31日Nagoya Congress Center

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2023 International Conference on Solid State Devices and Materials

2023年9月5日〜10月31日Nagoya Congress Center

[A-8-01]Dual gating of hBN/bilayer-graphene superlattices: band-engineering and doping a Dirac material

^○Yoshifumi Morita¹, Takuya Iwasaki², Kenji Watanabe², Takashi Taniguchi²(1. Gunma Univ. (Japan), 2. National Inst. for Material Sci. (Japan))

https://doi.org/10.7567/SSDM.2023.A-8-01

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We shall discuss transport properties of dual-gatedhexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. A detailed study of the hBN/BLG superlattices should pave the way toward the “global phase diagram” with a variety of broken symmetries.

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