Presentation Information

[Tu-B5-02]Photoelectron Holographic Study of Atomic Site Occupancy of the Si Dopant in k-Ga2O3(001)

*Yoshiyuki Yamashita1,2, Yu-Hua TSAI1,2, Yusuke HASHIMOTO3, Tomohito MATSUSHITA3, Piero MAZZOLINI4 (1. National Institute for Materials Science (Japan), 2. Kyusyu University (Japan), 3. Nara Institute of Science and Technology (Japan), 4. University of Parma (Italy))

Keywords:

Photoelectron Holography,dopant,Ga2O3


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