[MdJZ7QKR] Tu-Poster-A

[Tu-P-23] Surface Dipole Reorientation and Dual-Gate Stabilization in Tellurium Transistors

*Ding-Yeh Chuang¹, Sung-Tsun Wang¹, Kai-Wei Li¹, Tzu-Ting Weng¹, Yu-Cheng Chang¹, Chia-Chen Chung², Chia-Hung Lo², Shih-Chieh Chen¹, Tanveer Ahmed¹, Ciao-Fen Chen³, Chan-Yuen Chang⁴, Shun-Tsung Lo³, Yen-Fu Lin⁵, Terry Y. T. Hung⁶, Chao-Ching Cheng⁶, Iuliana P. Radu⁶, Yu-Lun Chueh^2,7,8,9, Der-Hsien Lien¹ (1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu (Taiwan), 2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu (Taiwan), 3. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu (Taiwan), 4. National Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu (Taiwan), 5. Department of Physics, National Chung Hsing University, Taichung (Taiwan), 6. Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu (Taiwan), 7. College of Semiconductor Research, National Tsing-Hua University, Hsinchu (Taiwan), 8. Department of Physics, National Sun Yat-sen University, Kaohsiung (Taiwan), 9. Department of Materials Science and Engineering, Korea University, Seoul (Korea))

Keywords:

Tellurium transistor,Electrical hysteresis,Gas adsorption,Dipole reorientation,Al2O3 encapsulation,Dual-gate transistor