Presentation Information
[We-P-47]Influence of Nanoscale Channel Structure on the Electrical Characteristics of SiO2-Capped Ultrathin Transition-Metal Oxide Semiconductor PFETs
*Ya-Jing Wu1, Chun Chieh Lu1, Robert Tseng1, Der-Hsien Lien1 (1. National Yang Ming Chiao Tung University (Taiwan))
Keywords:
Transition-metal oxide semiconductor,PMOS,nanoscale island morphology,SiO2 capping layer,structure–electrical property correlation
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