[MdJZ7QKR] Tu-Poster-A

[Tu-P-25] Geometry-Dependent Percolative Transport and Threshold Voltage Scaling in Amorphous Oxide Transistors

*Hung-Chi Yao¹, Robert Tseng¹, Yi-Yu Pan¹, Emi Minamitani², Chun-Liang Lin³, Der-Hsien Lien^1,3 (1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan (Taiwan), 2. SANKEN, The University of Osaka, Ibaraki, Osaka, Japan (Japan), 3. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan (Taiwan))

Keywords:

Percolation transport,Amorphous semiconductors,Oxide semiconductors,Dimensional scaling effect,Threshold voltage shift