16th International Symposium on Atomic Level Characterizations for New Materials and Devices '26（ALC'26）
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Session Details

Methodology for Application

[We-C5]Functional Nanodevices, Interfaces & Semiconductor Technologies

Wed. Nov 4, 2026 2:30 PM - 4:30 PM
Room C (M105, 1st Floor)
Chair: Izumi Mochizuki (SPF, IMSS, KEK), Shinya Hosokawa (Shimane University)
2:30 PM - 3:00 PMINVITED

[We-C5-01]Electrical switching in fullerene junction

*Kazuhito Tsukagoshi1 (1. NIMS (Japan))
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3:00 PM - 3:20 PM

[We-C5-02]Visualizing Dynamic Molecular Manipulation on a Graphene Field Effect Transistor

*Hsin-Zon Tsai1,2,3, Franklin Liou2,3, Yiming Yang2, Andrew S. Aikawa2, Zachary A. H. Goodwin4, Kenji Watanabe5, Takashi Taniguchi6, Feng Wang2,3,7, Johannes Lischner4, Michael F. Crommie2,3,7 (1. National Cheng Kung University (Taiwan), 2. University of California, Berkeley (USA), 3. Material Science Division, Lawrence Berkeley National Laboratory (USA), 4. Department of Materials, Imperial College London (UK), 5. Research Center for Electronic and Optical Materials, National Institute for Materials Science (Japan), 6. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (Japan), 7. Kavli Energy NanoSciences Institute at the University of California, Berkeley (USA))
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3:20 PM - 3:30 PM

Time Adjustment

3:30 PM - 4:00 PM

[We-C5-03]Photon Emission Enhancement of Lanthanide Ions Implanted into Nanostructured GaN

*Shin-ichiro Sato1 (1. National Institutes for Quantum Science and Technology (Japan))
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4:00 PM - 4:30 PMINVITED

[We-C5-04]Multiferroic Properties and Memory Applications of Fullerene-Embedded Silicon Interfaces

*Mon-Shu Ho1, Pei-fang Chung (1. Physics Department, National Chung Hsing University (Taiwan))
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