Presentation Information
[2P-59*]Doping-Induced Oxygen-Vacancy-Related Defects Drive Ultrafast Hole Trapping in Plasmonic Indium-Doped ZnO Nanocrystals
*Kanato Nagai1, Yuki Nagai1, Yoichi Kobayashi1 (1. Ritsumeikan Univ.)
Keywords:
Oxygen vacancy,Degenerate semiconductors,Transient absorption,Localized surface plasmon resonance,Doped nanocrystals
