Presentation Information

[2P-59*]Doping-Induced Oxygen-Vacancy-Related Defects Drive Ultrafast Hole Trapping in Plasmonic Indium-Doped ZnO Nanocrystals

*Kanato Nagai1, Yuki Nagai1, Yoichi Kobayashi1 (1. Ritsumeikan Univ.)

Keywords:

Oxygen vacancy,Degenerate semiconductors,Transient absorption,Localized surface plasmon resonance,Doped nanocrystals