Presentation Information
[PS1-08]Molecular Dynamics Simulation of Dislocations in Silicon Carbide (SiC) Crystal by Newly Developed Machine-Learning Potential
*Ken-ichi Saitoh1, Kenji Nishimura2, Junya Moriguchi3, Kazuhiro Tada3 (1. Department of Mechanical Engineering, Kansai University (Japan), 2. National Institute of Advanced Industrial Science and Technology(AIST) (Japan), 3. Graduate School of Science and Engineering, Kansai University (Japan))
Keywords:
Molecular dynamics,Machine Learning,Silicon carbide (SiC),Dislocation,Interatomic potential
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