Presentation Information
[PS2-O-09]Drift Diffusion Study on Ion-gated Two-dimensional Transistors
*Akiko Ueda1, Yijin Zhang2, Nobuyuki Sano3, Hiroshi Imamura1, Yoshihiro Iwasa4,5 (1. AIST (Japan), 2. Inst. Ind. Sci., Univ. Tokyo (Japan), 3. Univ. Tsukuba (Japan), 4. QPEC and Dept. Appl. Phys., Univ. Tokyo (Japan), 5. RIKEN CEMS (Japan))
Keywords:
Ion-gated transistors,Transition metal dichalcogenide,Device simulation,Drift diffusion method
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