[MoD3] Advanced Semiconductor Lasers (I)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[MoD3-01 Invited] High-power diode lasers for fusion energy applications: perspectives from research and industry

〇Paul Crump¹, S. Arslan¹, A. Luferau¹, E. Bahat-Treidel¹, J. Boschker¹, B. Eppich¹, K. Häusler¹, A. Maaßdorf¹, D. Martin¹, A. Knigge¹ (1. Ferdinand-Braun-Institut (Germany))

Substantially cost-reduced (ca. 20-fold) and higher performance diode lasers are needed for Inertial Fusion Energy (IFE) systems, and we review efforts in research and industry to address this need. Industry typically focuses on near-term delivery of reliable 1-cm diode laser bars with lasing wavelength around 880 or 940 nm with power and conversion efficiency scaled towards 1 kW (ca. 2-fold) and 70%, with cost reduced by production scaling. In parallel, research seeks substantial further power scaling (10-fold) via innovation in design and III-V technology, adds new functions (e.g. grating stabilization) and develops new techniques for increasing yield. Diode lasers based on a coupled multi-junction monolithically-grating-stabilized approach taken from LIDAR are proposed as an especially promising path forward. We illustrate progress using results from the FBH, including the first demonstration of a 1000 W monolithically-grating stabilized laser bar emitting at 885 nm.