Presentation Information
[MoD3-02 LN]High-Temperature-Stable 1-μm-Band InGaAs/GaAs Membrane Laser: Design and Theoretical Analysis
〇Shun Ito1, Keigo Imagawa1, Yoshitaka Ohiso1, Tsukuru Katsuyama1, Keisuke Kawahara1, Nobuhiko Nishiyama1 (1. Inst. of Science Tokyo (Japan))
As computing demand increases, larger chiplet systems require high-density optical interconnects to overcome the high-power consumption of electrical wiring. In these systems, optical light sources must operate close to heat-generating processors such as CPUs, where ambient temperatures can exceed 100 °C. Therefore, lasers with stable high-temperature operation are essential.
For this purpose, the temperature performance of conventional InP-based membrane lasers is insufficient for optical chiplet applications. To address this issue, we propose and investigate a 1-μm-band InGaAs/GaAs membrane laser. The proposed structure employs highly strained InGaAs quantum wells with deep potential wells that strongly suppress carrier overflow.
Theoretical analysis predicts an excellent characteristic temperature, T0, of 121 K, indicating much better temperature performance than conventional InP-based lasers. In addition, a DFB laser design with a Bragg wavelength of 1030 nm is optimized by considering temperature-induced detuning and fabrication tolerances. As a result, the calculated current–light (I–L) characteristics show stable operation with a threshold current below 0.2 mA even at 120 °C, demonstrating strong potential for optical chiplet light sources.
For this purpose, the temperature performance of conventional InP-based membrane lasers is insufficient for optical chiplet applications. To address this issue, we propose and investigate a 1-μm-band InGaAs/GaAs membrane laser. The proposed structure employs highly strained InGaAs quantum wells with deep potential wells that strongly suppress carrier overflow.
Theoretical analysis predicts an excellent characteristic temperature, T0, of 121 K, indicating much better temperature performance than conventional InP-based lasers. In addition, a DFB laser design with a Bragg wavelength of 1030 nm is optimized by considering temperature-induced detuning and fabrication tolerances. As a result, the calculated current–light (I–L) characteristics show stable operation with a threshold current below 0.2 mA even at 120 °C, demonstrating strong potential for optical chiplet light sources.
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