[MoD3] Advanced Semiconductor Lasers (I)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[MoD3-03] InAs/GaAs Quantum Dot Lasers and Photodetectors Fabricated on Standardizable Si-based Epitaxial Wafers for Monolithic Photonic Integrated Circuits

〇Xiao-Guang Yang¹, Hong-Yu Chai¹, Ye Li², Tao Yang¹ (1. Inst. of Semiconductors, Chinese Academy of Sci. (China), 2. Inst. of Microelectronics, Chinese Academy of Sci. (China))

In this paper, we report a novel method to realize large-scale monolithic photonic integrated circuits (PICs) based on standardizable silicon-based epitaxial wafers. These wafers are fabricated on Si (001) substrates using molecular beams epitaxy (MBE) system. They contain eight stacked layers of InAs/GaAs quantum dots (QDs), which offer a shared active region for multiple types of optoelectronic devices. We prioritize the presentation of lasers (LDs) and photodetectors (PDs) fabricated on the basis of these prepared wafers. First, distributed feedback (DFB) LD shows a high output power, low noise, and insensitivity to light feedback. It exhibits a high single-mode output light power of up to 25 mW with a side mode suppression ratio (SMSR) of 56.5 dB. Second, directly modulated LD can support a 12.5 Gb/s NRZ modulate signal. It shows strong optical feedback tolerance, leading to a low bit error ratio (BER) of 6×10^–6 even at a maximum feedback intensity of −9 dB. Third, waveguide PD achieves an ultra-low dark current of 0.91 pA and a maximum bandwidth of 1.76 GHz.