[MoD3] Advanced Semiconductor Lasers (I)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[MoD3-04] InAs/InP quantum-dot lasers for mid-infrared photonics

〇Yangqian Wang¹, Hui Jia¹, Jae-Seong Park¹, Igor Marko², Haotian Zeng¹, Shangfeng Liu³, Mickael Martin⁴, Huiwen Deng¹, Chong Chen¹, Mingchu Tang¹, Qiang Li³, Thierry Baron⁴, Stephen Sweeney², Alwyn Seeds¹, Huiyun Liu¹ (1. Univ. College London (UK), 2. Univ. of Glasgow (UK), 3. Cardiff Univ. (UK), 4. Univ. Grenoble Alpes (France))

We demonstrate the first five-stack InAs/InP QD lasers emitting beyond 2 μm, achieving a threshold current density of 589 A/cm² and a maximum lasing temperature up to 50 ^oC, making a notable step forward in the development of mid-infrared semiconductor lasers.