[MoD3] Advanced Semiconductor Lasers (I)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[MoD3-05] Mid-Infrared Room-Temperature Continuous-Wave InAs/InP Quantum-Dot Microdisk Lasers

〇JAESEONG PARK¹, Haotian Zeng¹, Yangqian Wang¹, Hui Jia¹, Igor P Marko², Dominic A Duffy², Mengxun Bai¹, Yutong Zhang¹, Hexing Wang¹, Jun Li¹, Huiwen Deng¹, Rechard Beanland³, Stephen J Sweeney², Mingchu Tang¹, Alwyn Seeds¹, Moustafa El Kurdi⁴, Huiyun Liu¹ (1. University College London (UK), 2. University of Glasgow (UK), 3. University of Warwick (UK), 4. Universite Paris Saclay/CNRS (France))

Mid-infrared photonic integrated circuits (PICs) garner substantial interest due to their potential chip-scale applications such as gas monitoring and non-invasive diagnostics. Yet, the lack of efficient, compact short-wave mid-infrared (2 – 3 μm) light sources compatible with industry standard photonic platforms impedes high-density, monolithic integration. Here, we report the first room-temperature continuous-wave (CW) mid-infrared microdisk lasers on InP substrate enabled by InAs quantum dots. The optically pumped device with a diameter of 5.5 µm achieves single-mode CW lasing at 2.064 µm with a side-mode suppression ratio of 17 dB and a low threshold power of 40.6 mW. Under pulsed excitation, an ultra-low threshold of 95 µW is observed, with a maximum operating temperature up to 110 °C. These findings highlight the viability of InAs/InP QD microdisk for an ultra-compact, efficient short-wave mid-infrared light source, marking a notable step toward realizing mid-infrared PICs.