[MoD4] Advanced LED Technologies

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[MoD4-04] InGaN Red Micro-LEDs Achieving 1.01 GHz Bandwidth

〇Hongjian Li¹, Panpan Li¹, Guanqi Li¹, Chunyu Liu¹, Jinchai Li¹, Kai Huang¹, Rong Zhang¹ (1. Xiamen University (China))

The low modulation bandwidth of AlInGaP red micro light-emitting diodes (Micro-LEDs) limits full-color visible light communication (VLC) applications. Here, we demonstrate fast modulation speed InGaN red Micro-LEDs with red multiple quantum wells (MQWs) that exhibit sharp and uniform interfaces. The red Micro-LEDs show extremely low reverse leakage current of 1.77 × 10^-11 A at -5 V and an external quantum efficiency (EQE) of 4.07%. The -3 dB modulation bandwidth reaches 1.01 GHz for 20 μm device, which is the highest one among red Micro-LEDs. Furthermore, an optical communication system was established, achieving open eye diagrams up to 1 Gbps with measured quality factors. These results demonstrate the large potential of long-wavelength InGaN Micro-LEDs for next-generation high-speed VLC systems and optical computing.