[MoD4] Advanced LED Technologies

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[MoD4-05] Carrier Injection through V-defects in Long Wavelength GaN LEDs

〇Saulius Marcinkevicius¹, Rinat Yapparov¹, Tanay Tak², Jacob Ewing², Feng Wu², Shuji Nakamura², James S. Speck² (1. KTH Royal Inst. of Technology (Sweden), 2. Univ. of California, Santa Barbara (USA))

In long wavelength (green to red) multiple InGaN/GaN quantum well (QW) LEDs, carrier injection through semipolar QWs located on V-defect facets has previously been suggested as a possible channel for hole injection into all QWs of the active region. In this work, we provide a direct experimental proof that such transport path exists and is efficient. This has been done by means of scanning near-field electro- and photoluminescence spectroscopy on dual color multiple QW LEDs as well as single QW devices. We have also explored carrier diffusion through semipolar sidewall QWs, diffusion in polar QWs and properties of carrier recombination at the V-defects and parent threading dislocations. The findings of our work should aid further development of efficient long wavelength GaN LEDs.