[MoD4] Advanced LED Technologies

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[MoD4-06] Green Half-Loop-induced V-defect LEDs with Optimized AlGaN Caps

〇Alejandro Quevedo¹, Michael Wang¹, Feng Wu¹, Kent Nitta¹, Derek Lee¹, Shuji Nakamura¹, Steven DenBaars¹, James Speck¹ (1. University of California, Santa Barbara (USA))

Long wavelength Group III-nitride light emitting diodes (LEDs) suffer from poor efficiency for longer wavelength emission (green, yellow, red). This is partly due to increased polarization-induced barriers to vertical carrier injection at InGaN/GaN interfaces in the polar c-plane, where higher In-content is required for long wavelength emission. V-defects have been shown to bypass these barriers by allowing carriers to be injected through their semipolar sidewalls. In this work we demonstrate a green V-defect LED with optimized AlGaN caps achieving peak EQE and peak WPE values exceeding 40 % and 33 %, respectively.