[MoD4] Advanced LED Technologies

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[MoD4-07] Efficient Analysis of Carrier Localization and Polarization Switching in Disordered AlGaN UVC LEDs Using a Multi-band LL Solver

〇Yu-Ming Chang¹, Yuh-Renn Wu¹ (1. National Taiwan University (Taiwan))

AlGaN-based UVC LEDs (220-250 nm) suffer from poor hole confinement and strain-induced valence band crossover at high Al content (>60%), leading to dominant TM emission and reduced IQE. While conventional 3D k*p Schrodinger-Poisson solvers are rigorous, they are computationally prohibitive for disordered systems. In this work, we implement a multi-band Localization Landscape (LL) numerical solver with strain model, integrated with the Wigner-Weyl formalism, to efficiently capture quantum effects and carrier localization under random alloy fluctuations. The model is validated against experimental data for devices grown on AlN and AlGaN substrates, accurately reproducing the strain-dependent TE-TM polarization switching trends. Our LL-based 3D approach reduces simulation time from hundreds of hours to a few hours while maintaining high accuracy in predicting emission spectra and carrier transport. This fast and reliable tool enables the large-scale design and optimization of high-efficiency, strain-engineered UVC LEDs.