[MoPLN1] Plenary

8:40 AM - 9:20 AM JST(11:40 PM - 12:20 AM UTC)

[MoPLN1-01] Crossing the Chasm: SiC Semiconductor Technology in the Era of Transformation

〇Tsunenobu Kimoto¹ (1. Kyoto University (Japan))

High-voltage SiC (silicon carbide) power MOSFETs and Schottky barrier diodes have been penetrating the major market including HEV/EV, traction, and data centers, demonstrating remarkable energy saving. In this paper, recent progress in understanding of the physical properties, anisotropic junction breakdown, and improvement of MOS interface in SiC is shown together with the latest device development. Social impacts of SiC power devices are also presented.