[ThD1] Heterogeneous Integration on Silicon Photonics (I)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[ThD1-03] Dual-boosted InP/Si tunable lasers integrating two SOAs with different epitaxial structures using chip-on-wafer bonding technology

〇Hidenari Fujikata^1,2, Takuo Hiratani^1,2,3, Kento Komatsu^1,2,3, Naoko Inoue^1,2,3, Naoki Fujiwara^1,2,3, Takuya Mitarai^1,2,3, Shun Kimura^1,2, Tsukuru Katsuyama³, Nobuhiko Nishiyama^1,3, Hideki Yagi^1,2,3 (1. Photonics Electronics Technology Research Association (PETRA) (Japan), 2. Sumitomo Electric Industries (Japan), 3. Institute of Science Tokyo (Japan))

We demonstrate InP/Si heterogeneously integrated tunable lasers with dual SOA. Two types of InP-based SOAs are monolithically integrated with the tunable laser using InP chips on SOI wafer bonding technology. To integrate three gain sections on a Si waveguide, the dual taper-type coupler with narrow taper widths for high optical coupling efficiency (> 99% for calculation) between InP-based gain and Si waveguide sections are introduced. Consequently, the maximum light output power of 73 mW is achieved thanks to the integration of dual SOA.