[TuA1] 2D Materials: Emergent Device Applications

8:30 AM - 9:00 AM JST(11:30 PM - 12:00 AM UTC)

[TuA1-01 Invited] High Performance Field-Effect Transistors based on Modular van der Waals Heterostructures

〇Moon-Ho Jo¹ (1. Pohang University of Science and Technology (POSTECH) (Korea))

In atomically thin van der Waals (vdW) solids, electronic and atomic motions are tightly confined within two-dimensional (2D) lattices, giving rise to diverse electronic and optical excitations. Such emergent properties are yet to be further explored, when the 2D vdW lattices are artificially molded into novel crystals. In this talk, we present our recent developments of epitaxial molding of vdW heterostructures, achieved by deterministic vdW epitaxy in atomic precisions. The first example is the imbedded Luttinger liquid on monolayer MoS2 bicrystals by epitaxial tuning of mosaic textures, in which we showcase the epitaxial 1D metal arrays to build integrated low-power logics circuitry [1-3]. We also discuss another demonstration of modular vdW heterostructures, into which diverse 2D electronic phases can be achieved and assembled by layer-by-layer ion exchanges in epitaxial manners [4]. Epitaxial realization of new vdW lattices and their heterostructures in this study suggest novel synthetic pathways for construction of diverse 2D quantum solids.