[TuA1] 2D Materials: Emergent Device Applications

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[TuA1-04] Electronic Transport Properties of W-Based 2D TMDs and Janus TMDs for Advanced Contact Engineering in MOSFET Design

〇Heng-Yue Guo¹, Yuh-Renn Wu¹ (1. National Taiwan University (Taiwan))

This study employs first-principles calculations and Monte Carlo simulations to investigate the electronic transport of 2D W-based and Janus TMDs. Results demonstrate that Bismuth (Bi) contacts achieve superior Ohmic injection compared to Ti or Cu barriers. Furthermore, for Janus structures, intrinsic polarization is found to naturally boost 2DEG density and lower contact resistance. Combining these insights on metal selection and polarization effects, we propose optimized strategies to enhance the electrical performance of TMD MOSFETs.