[TuA2] Flexible Devices and Related Technologies

11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)

[TuA2-01 Invited] Development of High-Performance P-type Semiconductors for Transistors

〇Wonryeol Yang¹ (1. Pohang Univ. of Sci. and Tech. (POSTECH) (Korea))

Developing high-mobility p-type semiconductors that are compatible with low-temperature, silicon-processable routes remains a key challenge for integrating complementary electronics with mature n-type technologies. This presentation summarizes our recent progress in Sn²⁺ halide perovskite p-type thin-film transistors (TFTs). Solution-processed CsSnI₃-based devices exhibit field-effect hole mobilities exceeding 50 cm² V^-1 s^-1 with current modulation ratios above 10⁸ and robust operational stability. A triple A-cation approach (Cs–FA–PEA) further enables high-quality cascaded channel films, delivering record mobilities over 70 cm² V^-1 s^-1 and on/off ratios >10⁸, approaching the performance of commercial low-temperature polysilicon. Finally, we introduce thermally evaporated CsSnI₃ TFTs employing PbCl₂ as a hole-suppressing and crystallization-promoting additive, achieving >40 cm² V^-1 s^-1 mobility and scalable, large-area fabrication via an industry-compatible process.