[TuB1] Terahertz Devices

8:30 AM - 9:00 AM JST(11:30 PM - 12:00 AM UTC)

[TuB1-01 Invited] Towards Terahertz Bandwidth Heterogeneous Integration of Semiconductor Technologies

〇Viktor Krozer¹, Marko Rausch¹, Maruf Hossain¹, Tanjil Shivan¹, Jonas Gläsel², Christoph Stölmacker¹, Adam Rämer, Oleksandr Glubokov¹, Christian Berger¹, Ralf Doerner¹, Hady Yacoub¹, Patrick Runge², Wolfgang Heinrich¹, Patrick Scheele¹ (1. Ferdinand-Braun-Institut FBH (Germany), 2. Heinrich Hertz Institut HHI (Germany))

Heterogeneous integration with large bandwidth approaching terahertz frequencies allow for higher speed and higher functional complexity in electronic circuits and enable heterogeneously integrated photonic electronic modules. In this paper we discuss several technology approaches for semiconductor electronic and photonic integration. It is shown that bandwidth in excess of 300 GHz are attainable with interconnects placeable anywhere in a layout. Also Silicon (BiCMOS and CMOS) technologies can be heterogeneously integrated with compound semiconductor
technologies. Thermal limitations encountered in standard flipping are overcome with thermal spreading through vias.