[TuB1] Terahertz Devices

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[TuB1-02] High-Power Terahertz Oscillations Exceeding 2 mW with Resonant Tunneling Diodes

〇Hiroki Tanaka¹, Tomoya Uchijima¹, Safumi Suzuki¹ (1. Institute of Science Tokyo (Japan))

A resonant tunneling diode (RTD) oscillator integrated with a cavity resonator is expected to enable high-power terahertz oscillation due to the resonator’s low-loss and low-inductance characteristics. In this study, an RTD with a thickened undoped spacer layer in the epitaxial structure—resulting in lower capacitance—was integrated with a cavity resonator. This allowed for an enlarged RTD area while maintaining high-frequency operation. Consequently, output powers exceeding 2 mW were achieved at ~0.5 THz, approximately double that of previously reported single-device outputs. The oscillation characteristics agreed with theoretical predictions.