[TuB1] Terahertz Devices

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[TuB1-03] Cryogenic DC Performance of Binary InAs/GaAs Resonant Tunneling Diodes

〇Michele Cito Cito¹, Ryuto Machida¹, Issei Watanabe¹ (1. NICT (Japan))

Binary InAs/GaAs resonant tunneling diodes (RTDs) have been proposed to mitigate epitaxial imperfections and improve device performance. In this work, we investigate the DC characteristics of RTDs as a function of temperature in the range 4–300 K. One standard ternary InGaAs-based RTD is compared with two equivalent binary structures in terms of peak-to-valley current ratio (PVCR). At cryogenic temperature, temperature-dependent loss mechanisms such as impurity- and phonon-related scattering are reduced, leading to improved device performance. The binary RTDs exhibit a larger performance enhancement upon cooling compared to the ternary reference, suggesting a different low-temperature transport behavior and highlighting the potential of binary-based RTDs for cryogenic operation.