[TuB1] Terahertz Devices

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[TuB1-06] Uncooled, Ultrasensitive Terahertz Bolometric Detection Using Silicon Nitride Nanoelectromechanical-System Beam Resonators

〇Yuto Amano¹, Akira Kojima¹, Nobuyoshi Koshida¹, Ya Zhang¹ (1. Tokyo Univ. of Agri. and Tech. (Japan))

Terahertz (THz) detectors using MEMS/NEMS resonators have attracted growing interest due to their high sensitivity and fast response under room-temperature operation. Here, we report silicon nitride (SiN) doubly clamped NEMS beam resonators for high sensitivity THz bolometric sensing applications. The PECVD deposited SiN film contains a significant tensile stress, allowing the fabrication of ultra-thin NEMS beams with a thickness of ~50 nm. This device shows an ultrahigh thermal sensitivity with a noise-equivalent power (NEP) of 0.58 pW/√Hz, significantly outperforming conventional room-temperature THz thermal detectors.