[TuB1] Terahertz Devices

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[TuB1-07] Silicon-based MEMS resonators for uncooled, sensitive and fast terahertz sensing applications

〇Ya Zhang¹, Ryotaro Takuechi¹, Qian Liu¹, Zihao Zhao¹, Kazuhiko Hirakawa^1,2 (1. Tokyo Univ. of Agriculture and Technology (Japan), 2. Univ. of Tokyo (Japan))

Terahertz (THz) detectors using MEMS resonators have attracted great interests owing to their high sensitivity, rapid response, and room-temperature operation. For easy integration with CMOS circuits, silicon (Si) based MEMS detectors are highly desirable. Here we report an uncooled THz bolometer using doubly-clamped Si on insulator (SOI) MEMS beam resonator with piezoresistive readout. When external heat is applied to the MEMS beam, the resonance frequency shifts owing to the thermal strain in the beam. SOI MEMS resonators exhibit a high sensitivity with a NEP of about 36 pW/√Hz, and a thermal response time of about 88 μs, which is over 3 times faster than that of GaAs MEMS detectors. THz measurements using a FTIR demonstrate a broadband response spectrum across the 1–10 THz range. These results demonstrate that SOI MEMS bolometer features fast response and high sensitivity, while also being compact, broadband, and CMOS-compatible, highlighting its strong potential for advanced THz spectroscopy and imaging applications.