[TuD2] Nanowire and Quantum Dots

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[TuD2-01] Wavelength tuning of low density InAs/GaAs quantum dots

〇Ronel Christian Roca¹, Rhenish Simon¹, Itaru Kamiya¹ (1. Toyota Tech. Inst. (Japan))

Molecular beam epitaxy (MBE) -grown InAs/GaAs epitaxial quantum dots (QDs) are gaining interest as non-classical light sources for quantum photonic applications. For these applications, a low QD areal density is generally desired. However, there is an inadvertent trade-off between density control and wavelength tuning in conventional self-assembled QDs. In the present work, we propose the use of QD bi-layers to independently tune the photoluminescence wavelength, while controlling and maintaining the low density of the QDs.