[TuD2] Nanowire and Quantum Dots

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[TuD2-02] Telecom-band GaAsSb-based nanowires lasers on silicon photonic circuits

Cem Doganlar², Jona Zöllner², Paul Schmiedeke², Cristina Garcia-Marcilla², Markus Döblinger³, Benjamin Haubmann², Knut Müller-Caspary³, Jonathan J. Finley², 〇Gregor Koblmüller^1,2 (1. Technical University Berlin (Germany), 2. Technical University of Munich (Germany), 3. Ludwig-Maximilians-University (Germany))

We report telecom-band nanowire lasers integrated on silicon based on ternary GaAsSb nanowires and InGaAs MQWs as active gain media. Optically pumped lasing is observed in vertical-cavity and in-plane geometries over a range of operation temperatures, yet lasing threshold and linewidth are limited by the low Q-factor of the nanowire laser cavity. Integrating the nanowire lasers further onto on-chip high-Q Si ring resonators and, thus, providing external optical feedback, demonstrates promising schemes for reduction of lasing threshold and linewidth.