[TuD2] Nanowire and Quantum Dots

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[TuD2-03] P-Type Conduction of GaSb Nanowires Grown by MBE on HSQ Masked GaAs(001)

〇Soh Komatsu¹, Masashi Akabori¹ (1. JAIST (Japan))

GaSb nanowires are promising candidates for p-channel Gate-All-Around FETs due to their high hole mobility. However, growing high-quality GaSb nanowires is challenging due to the anti-surfactant behavior of Sb. In this work, we report electrical measurement results for back-gate FETs with GaSb nanowires grown on GaAs (001) using hydrogen silsesquioxane mask by molecular beam epitaxy. The nanowires were dispersed on Si/SiO₂ substrates and contacted by Pt electrodes to form FETs. The nanowires showed a diameter of approximately 250 nm and a length of 2500 nm. The resistivity was calculated to be approximately 0.4 Ωcm by 4-terminal measurements. Furthermore, I_D-V_BG characteristics confirmed that the GaSb nanowires behave as p-type semiconductors, showing a decrease in drain current with increasing back-gate voltage. Full depletion was not observed, likely due to the large diameter of the GaSb nanowire and the thick gate insulator (SiO₂: 400 nm).