Presentation Information
[TuD2-04]Silicon-Compatible AlGaAs/GaAs Nanowire Quantum Emitters with Embedded QD
〇Illia Tikhonov1,2, Sung-Yul L. Park1, Ga Hyun Cho1,3, Jindong Song1,2 (1. Korean Inst. of Sci. and Tech. (Korea), 2. Univ. of Sci. and Tech. (Korea), 3. Hanyang Univ. (Korea))
Semiconductor nanowires with embedded quantum emitters form a practical platform for implementing integrated quantum photonic components. In this work, we describe a fabrication method for aluminium gallium arsenide/gallium arsenide (AlGaAs/GaAs) nanowires grown epitaxially on silicon (111) substrates, with embedding of quantum dots (QDs) realized during growth using the vapor-liquid-solid (VLS) mechanism inside a molecular beam epitaxy (MBE) chamber. Nanowire nucleation is initiated using gold nanoparticles created through thermal dewetting of an ultrathin Au film.
Ongoing work aims to improve positional control by using pre-patterned Au nanoparticle arrays. Deterministic nanowire placement is important for integration into silicon photonic circuits, where alignment affects coupling efficiency and device reproducibility.
Overall, this method provides a silicon compatible route to nanowire based single-photon sources and supports their incorporation into emerging on-chip quantum photonic systems.
Ongoing work aims to improve positional control by using pre-patterned Au nanoparticle arrays. Deterministic nanowire placement is important for integration into silicon photonic circuits, where alignment affects coupling efficiency and device reproducibility.
Overall, this method provides a silicon compatible route to nanowire based single-photon sources and supports their incorporation into emerging on-chip quantum photonic systems.
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