[TuD2] Nanowire and Quantum Dots

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[TuD2-05] Thermal Rectification Properties of InAs Quantum Dots on GaAs Substrates

Bohao Wang^1,2, Xiaoyang Zhao^1,2, Shiyu Xiao^1,2, Xiaoling Chen¹, Yidi Bao¹, 〇Xiaodong Wang^1,2 (1. Institute of Semiconductors, Chinese Academy of Sciences (China), 2. University of Chinese Academy of Sciences (China))

In this study, we report progress on the investigation of the thermal rectification performance of InAs quantum dots grown on GaAs substrates. As zero-dimensional materials, quantum dots possess unique quantum characteristics and phonon transport properties. By using electron-beam lithography (EBL) patterning and molecular beam epitaxy (MBE), we can control the spatial distribution and density of quantum dots to create structural asymmetry, thereby enabling thermal rectification in the samples. We have fabricated experimental samples with asymmetric quantum-dot density distributions in the laboratory. Finite-element simulations were used to evaluate the thermal rectification efficiency of this scheme, yielding a rectification ratio of approximately 6.9% when the quantum-dot density in the patterned region is 900 μm^-2.