[TuP3D] D. Photonic devices and related technologies

[TuP3D-02] Temperature-Aware Numerical Modeling of Energy-Efficient InGaAsP Variable-Confinement SOAs

Célia Cruz¹, Cosimo Calò¹, 〇Hélène Carrere² (1. III-V Lab, a joint laboratory between Nokia-Bell Labs, Thales and CEA-Leti, Palaiseau, France (France), 2. Univ Toulouse, INSA Toulouse, CNRS, LPCNO, Toulouse, France (France))

Energy-efficient semiconductor optical amplifiers based on variable-confinement architectures (VC-SOAs) are promising for next-generation broadband optical networks. Optimizing their performance requires complex designs, for which we developed a self-consistent numerical model. Simulations using semi-phenomenological rate equations reproduce general trends of chip gain and noise figure, while showing discrepancies at high gain and short wavelengths. To clarify these degradations, we perform six-band k.p modeling of the quantum-well band structure and material gain calculation. Performance drops are attributed to thermally induced carrier escape from higher electron subbands and pronounced redistribution of holes across the accessible valence-band states. This redistribution reduces material gain and enhances Auger recombination through increased occupation of high-energy and high-k states. These results demonstrate that temperature-aware calculations, including bandgap, carrier distribution, and Auger effects, are essential for reliable design and optimization of VC-SOAs.