[TuP3D] D. Photonic devices and related technologies

[TuP3D-03] Ultra-high efficiency InGaN red micro-light-emitting diodes with reversed
efficiency size effect

〇panpan Li¹ (1. XIAMEN university (China))

We report ultra-high-efficiency InGaN red micro-light-emitting diodes exhibiting an unconventional reversed size effect, in which external quantum efficiency increases as device size decreases. High-quality, high-indium-content InGaN quantum wells with atomically sharp interfaces enable uniform single-peak red emission at ~620 nm. Remarkably, the EQE rises from ~13% to ~18% as the micro-LED size is reduced from 30 µm to 4 µm. Spatially resolved measurements reveal that enhanced carrier localization underlies this reversed scaling behavior, enabling scalable, high-efficiency red micro-display integration.