[TuP3D] D. Photonic devices and related technologies

[TuP3D-05] Performance Enhancement of GaNAs-Based Polarization-Sensitive Photodiode Based on Valence Band Splitting

〇Daiki Mineyama¹, Itsu Tanaka¹, Takeru Omi¹, Kaito Nakama², Hidetoshi Hashimoto², Keisuke Minehisa², Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1. IST, Hokkaido Univ. (Japan), 2. RCIQE, Hokkaido Univ. (Japan))

Here, we reported on the performance enhancement of GaNAs-based polarization-sensitive photodiodes by utilizing a valence band splitting for selective light-hole excitation. For the GaNAs-based photodiode with a nitrogen content of 2.8%, the polarization detection efficiency reached 40% at a laser wavelength to selectively excite the light-hole band (1200 nm), as compared with 7% at 1100 nm. These findings demonstrate that controlling the valence band structure of light-receiving layer is an effective strategy for improving the polarization detection characteristics.