[TuP3D] D. Photonic devices and related technologies

[TuP3D-12] Cell Tempaerature Dependence of Thermoradiative Power Generation in InSb and InGaAs Photodiodes

〇Ayaka Miyazaki¹, Naoya Sagawa¹, Muhammad Waleed Akram¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1. Saitama Univ. (Japan))

The cell temperature dependence of thermoradiative power generation was investigated using InSb and InGaAs photodiodes (PDs). For the InGaAs PD, although the absolute magnitude differs by orders of magnitude, the temperature behavior of the measured power generation characteristics showed good agreement with that calculated by the detailed balance model up to 130 °C. In contrast, the InSb PD exhibited a clear deviation from the theoretically predicted behavior as the cell temperature increased, accompanied by saturation and degradation of the output power at high temperatures >70 °C. These results indicate that selecting materials with an appropriate bandgap according to the operating temperature range is essential for thermoradiative power generation.