[TuP3F] F. Low dimensional materials and structures

[TuP3F-03] Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

〇Dingli Guo¹ (1. Southeast University (China))

Band alignment engineering is critical for charge separation in optoelectronics, dictating vdWH-based photodetector/LED performance. Yet vdWH band offset’s effect on key device merits lacks systematic analysis. Here, we tune vdWH band alignment by CVD. Exp/theo results confirm its shift from Type I to III. Type I photodetector shows 58.12 A/W responsivity, 2.91×10¹² Jones detectivity; Type III has 3.2 μs fast response. Type III vdWH LEDs have top luminance/EL EQE in room-temperature TMD p-n diodes, via band alignment-induced charge injection. This work gives a key reference for future optoelectronic design with band alignment principles.