[TuP3F] F. Low dimensional materials and structures

2:00 PM - 4:00 PM JST(5:00 AM - 7:00 AM UTC)

[TuP3F-06 LN] Ultrawide Charge-Trap Memory Window and Photoinduced Synaptic Behavior in P-Channel Amorphous Oxide Semiconductors

〇Deogkyu Choi¹, Seungho Bang², Hyeong Chan Suh¹, Chaewon Lee¹, Seoyoung Lim³, Young Joo Yu¹, Dong Hyeon Kim¹, Sung Hyuk Kim¹, Jaekak Yoo⁴, Taehoon Kim¹, Dohyeon Lee¹, Hyeon Jung Park¹, Hongseok Oh⁵, Dong-Wook Kim³, Mun Seok Jeong¹ (1. Hanyang Univ. (Korea), 2. Konkun Univ. (Korea), 3. Ewha Womans Univ. (Korea), 4. Univ. of Illinois at Urbana-Champaign (USA), 5. Soongsil Univ. (Korea))

The long-standing lack of high-performance p-channel amorphous oxide semiconductors has remained a major limitation for multifunctional oxide electronics and neuromorphic devices. Here, we report a p-channel amorphous oxide semiconductor formed by ultraviolet–ozone oxidation of crystalline 2D tellurium into amorphous tellurium trioxide (a-TeO₃). The UV–O₃ treatment converts narrow-bandgap 2D-Te into a wide-bandgap amorphous oxide channel with an optical bandgap of 3.02 eV. The resulting transistor exhibits an ultrawide charge-trap memory window of 58.5 V and well-resolved multilevel resistance states under ambient conditions. In addition, optically induced synaptic plasticity is achieved through persistent photocurrent-assisted conductance modulation, with extracted update characteristics of β_p = 0.4, β_d = 1.52, and G_max/G_min = 1.94. When implemented in a hardware-constrained 484–100–10 neural network, these experimentally obtained characteristics enable stable MNIST learning behavior close to the ideal digital baseline. These results establish a-TeO₃ as a promising p-channel platform for nonvolatile memory and optoelectronic neuromorphic devices.