[TuP3H] H. Flexible materials

[TuP3H-05] Enhanced Performance of Organic Floating-Gate Transistors Based on Dinaphthothienothiophene for Optoelectronic Memory Applications

〇Keita Yamazaki¹, Kazuki Nakagawa¹, Shusei Hattori¹, Takashi Kobayashi¹, Hiroyoshi Naito^1,2, Takashi Nagase¹ (1. Osaka Metropolitan Univ. (Japan), 2. Ritsumeikan Univ. (Japan))

Top-gate organic transistor memories with good transistor performance were fabricated by combining a vacuum-deposited wide-bandgap organic semiconductor layer with a solution-processed organic composite insulator layer. Organic transistor memories based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene with Ag nanoparticles formed by vacuum evaporation exhibit large threshold voltage shifts by programming under light illumination when an organic insulator layer containing soluble fullerenes is employed, and demonstrate highly linear conductance modulation for long-term potentiation and depression, indicating their potential for analog synaptic device applications.