Special Lecture(9:00 AM - 10:30 AM JST)[SL]Special Lectures on Nitride and Oxide Based Wide Bandgap Semiconductor DevicesChair: Joel T. Asubar (Univ. of Fukui)OpenClose
D8. Silicon LSI Emerging Technologies(10:45 AM - 12:30 PM JST)[5]Session 5 (D8. Silicon LSI Emerging Technologies)Chairs: Takayuki Mori (Kanazawa Inst. of Tech.), Shibun Tsuda (Renesas Electronics Corp.)OpenClose
D1. Photovoltaics(2:30 PM - 4:15 PM JST)[7]Session 7 (D1. Photovoltaics)Chairs: Hiroaki Benten (NAIST), Hiroyuki Kanda (AIST)OpenClose
D3. Wide Bandgap Materials and Devices(4:40 PM - 6:40 PM JST)[9]Session 9 (D3. Wide Bandgap Materials and Devices)Chairs: Joel T. Asubar (Univ. of Fukui), Dagmar Gregušová (Slovak Academy of Sci.)OpenClose
D2. Energy Harvesting/Battery-related Technologies and Materials(10:45 AM - 12:30 PM JST)[6]Session 6 (D2. Energy Harvesting/Battery-related Technologies and Materials)Chairs: Myo Than Htay Yamamoto (Shinshu Univ.), Tamotsu Okamoto (NIT, Kisarazu College)OpenClose
C. Nanotechnologies for Electronics(2:30 PM - 4:30 PM JST)[8]Session 8 (C. Nanotechnologies for Electronics)Chairs: Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Toru Matsuura (NIT, Fukui College)OpenClose
A. Organic Materials and Devices for Electronics(4:40 PM - 6:10 PM JST)[10]Session 10 (A. Organic Materials and Devices for Electronics)Chairs: Shigeki Naka (Univ. of Toyama), Masahiro Nakano (Kanazawa Univ.)OpenClose