[C-2A] マイクロ波 A

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Candidate for Academic Incentive Award

[C-2A-09] Fabrication of GaN IMPATT diode at K–Ka band

○Seiya Kawasaki¹, Takeru Kumabe¹, Manato Deki², Hirotaka Watanabe³, Atsushi Tanaka³, Yoshio Honda^2,3, Manabu Arai³, Hiroshi Amano^2,3 (1. Nagoya Univ., 2. D Tech Serial Innovation Center, Nagoya Univ., 3. IMaSS, Nagoya Univ.)

Keywords:

GaN,Microwave / millimetre-wave oscillator,IMPATT diode,Avalanche breakdown