[C-2A] Microwave and Millimeter Wave Active Devices and Circuits

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Candidate for Academic Incentive Award

[C-2A-09] An Inductively Gated GaN HEMT Inverse Class-F Rectifier Achieving 85% Efficiency at 10 W Input Power

◎Taisei Shimada¹, Shinichi Tanaka¹ (1. Shibaura Univ.)

Keywords:

Rectifier,GaN HEMT,Diode,Harmonic Tuning,Resonance

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