PlenaryTalk

4:00 PM - 5:00 PM JST(7:00 AM - 8:00 AM UTC)

[1P-01] AlN-Based Deep-UV Laser Diodes: A New Frontier in Luminescence Science and Engineering

*Hiroshi Amano^1,2, Akira Yoshikawa^2,1, Ziyi Zhang^2,1, Maki Kushimoto^1,2 (1. Nagoya Univ. (Japan), 2. Ultec Inc. (Japan))

Keywords:

AlN,Distributed Polarization Doping,Deep Ultraviolet Laser Diodes,Stress/Strain,Interface