[MD-001] Material Development in Energy & Sustainability 1

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[MD-1-04] High-Resolution Characterization of Dislocations in GaN Substrates Using Synchrotron X-ray Topography

*Masakazu Kanechika¹, Satoshi Yamaguchi², Yoshihiro Kishida², Kazuhisa Isegawa² (1. Nagoya University, 2. Toyota Central R&D Labs., Inc.)